Open AccessIssues of TRIM program as a tool for developing a silicon detectors radiation degradation scenario
Author(s) -
Д. Д. Митина,
E. Verbitskaya,
V. Eremin
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1400/4/044014
Subject(s) - trim , silicon , irradiation , detector , degradation (telecommunications) , ion , reliability (semiconductor) , radiation damage , radiation , materials science , heavy ion , energy (signal processing) , optoelectronics , nuclear physics , nuclear engineering , computer science , physics , optics , engineering , telecommunications , power (physics) , quantum mechanics , operating system
The presented study is focused around the TRIM program issues and its applications for prediction of silicon detectors degradation under heavy ions of 40 Ar. Results of the simulations of low-energy ion (53.4 MeV) and high-energy ion (1.62 GeV) irradiation are demonstrated. Experimental data for silicon p + -n-n + detectors irradiated by the low energy are also presented. Reliability of TRIM simulations application for studying silicon detectors degradation under heavy ion irradiation is discussed.