Open AccessInvestigation of local ion-stimulated carbon deposition to create vacuum field emission diodes
Author(s) -
Ivan Panchenko,
Nikita Shandyba,
A. S. Kolomiytsev,
С. А. Лисицын
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1400/4/044005
Subject(s) - nanoelectronics , materials science , field electron emission , diode , tungsten , optoelectronics , deposition (geology) , carbon fibers , focused ion beam , dielectric , semiconductor , vacuum deposition , ion , nanotechnology , engineering physics , thin film , electron , chemistry , physics , metallurgy , paleontology , organic chemistry , quantum mechanics , sediment , composite number , composite material , biology
This paper presents the results of experimental studies of the influence of the technological parameters of a focused ion beam (FIB) on the process of local ion-stimulated deposition of carbon and tungsten when creating elements of vacuum nanoelectronics. The dependences are obtained illustrating the influence of the time of the FIB exposure at a point on the geometric parameters of the structures. Experimental samples of vacuum field-emission diodes based on semiconductor-metal-dielectric structures were fabricated by ion-stimulated carbon deposition. A technological process for creating field-emission diodes has been developed. The prospects of applying the FIB method for creating structures of vacuum field emission nanoelectronics are demonstrated.