Open AccessElectrical switching in metal-oxide-metal structures based on anodic niobium oxide
Author(s) -
A. L. Pergament,
П. П. Борисков
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1399/2/022017
Subject(s) - electroforming , oxide , materials science , niobium , metal , niobium oxide , anode , memristor , metallurgy , nanotechnology , electronic engineering , layer (electronics) , electrode , chemistry , engineering
Nonlinear current-voltage ( I – V) characteristics with S-type negative differential resistance, as a characteristic feature of the switching effect, are inherent in a variety of transition metal oxides, niobium oxide included. Although this phenomenon has been known for a long time, recent proposals to use oxide-based switching devices as elements of oscillatory neural networks have resumed the interest in this area. In this work, electrical switching in sandwich structures based on anodic films of niobium oxide is studied. After being electroformed, these structures exhibit S-shaped I – V characteristics. As the temperature increases, the threshold voltage decreases, presumably tending to zero at a critical temperature T 0 , which correlates with the temperature of metal–insulator phase transition of niobium dioxide. Channels consisting of NbO 2 are formed in the initial anodic films during the process of electroforming.