Open AccessSensivity analysis of impact ionization coefficients in an electronic device
Author(s) -
Hugo Aya Baquero
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1391/1/012017
Subject(s) - impact ionization , ionization , monte carlo method , mosfet , electron , electron ionization , computational physics , current (fluid) , electron avalanche , statistical physics , materials science , physics , engineering physics , nuclear physics , ion , voltage , mathematics , statistics , thermodynamics , transistor , quantum mechanics
Terminal current in a device increases when energetic carriers create additional carriers by impact ionization. Okuto and Crowell suggested an empirical model for describe this phenomenon. In this paper, Monte Carlo techniques were used to observe the effect of variability in the impact ionization coefficients on the results obtained from a computational model for electrons and holes transport. The model was implemented in FEM simulation tool, in order to study avalanche current in a MOSFET including uncertainty of the impact ionization coefficients of material.