Open AccessThe Kondo effect in 2D electron gas of magnetically undoped AlGaN/GaN high-electron-mobility transistor heterostructures
Author(s) -
N. K. Chumakov,
И. А. Черных,
А. Б. Давыдов,
И. С. Езубченко,
Yu. V. Grishchenko,
L. L. Lev,
И. О. Майборода,
Vladimir N. Strocov,
V. G. Valeyev,
М. Л. Занавескин
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1389/1/012019
Subject(s) - magnetoresistance , condensed matter physics , heterojunction , fermi gas , materials science , electron , magnetic field , electrical resistivity and conductivity , atmospheric temperature range , kondo effect , transistor , electron mobility , physics , voltage , quantum mechanics , meteorology
Unusual observation of the Kondo effect in two-dimensional electron gas (2DEG) of magnetically undoped AlGaN/GaN high-electron-mobility transistor heterostructures is reported. The temperature-dependent zero-field resistivity data exhibited an upturn below 120 K, while the standard low-temperature weak-localization behaviour was revealed at T → 0. Magnetotransport characterization was carried out in the magnetic fields up to 80 kOe, applied perpendicular to the 2DEG plane, in the temperature range 1.8 ÷ 300 K. Negative low-temperature magnetoresistance with a magnitude of order of 1 % was detected. The data set is analysed in the frame of the multichannel Kondo model for d 0 -magnetic materials.