Open AccessSynthesis of a chalcopyrite material, based on CuIn1−xGaXSe2(X = 0.3 y 0.5), for application as semiconductor layer, deposited by a low-cost technique
Author(s) -
Y T Castellanos Báez,
Édgar Absalón Torres-Barahóna,
Jairo Alberto Gómez Cuaspud,
Enrique Vera López,
Yaneth Pineda-Triana
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1386/1/012094
Subject(s) - raman spectroscopy , materials science , chalcopyrite , scanning electron microscope , dielectric spectroscopy , layer (electronics) , semiconductor , deposition (geology) , spectroscopy , solar cell , analytical chemistry (journal) , thin film , chemical engineering , optoelectronics , composite material , metallurgy , nanotechnology , electrode , optics , chemistry , electrochemistry , copper , paleontology , physics , engineering , quantum mechanics , chromatography , sediment , biology
The current work reports the synthesis and characterization of a photovoltaic material based on the CuIn 1−x Ga X Se 2 (X = 0.3 y 0.5) system, making use of the doctor blade method. For this purpose, homogeneous inks were obtained and worked under previous stoichiometry arrangement. The deposition process of thin films, were made in a heating plate on conventional glass substrates, previously washed and treated for this purpose. Once the layers of Cu, In, and Ga were deposited by chemical bath, a thermal treatment was performed at 550 °C for 30 min in a conditioned oven, in which the selenization process was performed. The obtained films were characterized by X-ray diffraction, Raman spectroscopy, solid-state impedance spectroscopy, UV spectroscopy and scanning electron microscopy techniques. The identification of the main crystalline phase could be corroborated, as well as the conductive and optoelectronic behavior of the solids in accordance with reported in literature. Simultaneously, it was checked that the method used allows obtaining layers of an optimum thickness, in order to be used as an absorbent layer in the design of solar devices.