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Temperature distribution of gas flows in a grid area activated by chemical vapor deposition
Author(s) -
А. И. Сафонов,
Denis Y. Panin,
Н. И. Тимошенко
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1382/1/012167
Subject(s) - flow (mathematics) , argon , volumetric flow rate , chemical vapor deposition , mass flow , materials science , thermodynamics , chemistry , mechanics , nanotechnology , physics , organic chemistry
The scheme of gas temperature measurements in flows of rarefied precursor gases by HW CVD was elaborated. The gas flow temperature of air, argon and hexafluoropropylene oxide was measured at different mass flow rates. The presence of a large well-heated area in gas flows forward the activator was discovered. Asymmetric heating of the gas flow in areas above and under an activator was observed. Cooling of gas flows by increase in the precursor gas mass flow rate was confirmed. The parameters, optimal for the formation of the area with uniform temperature flows above the surface of substrate holder, were determined.

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