Open AccessJosephson current in silicene-based SBS Josephson junction: Effect of perpendicular electric field
Author(s) -
Tatnatchai Suwannasit
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1380/1/012103
Subject(s) - silicene , condensed matter physics , josephson effect , electric field , superconductivity , pi josephson junction , physics , perpendicular , electric current , optoelectronics , silicon , quantum mechanics , geometry , mathematics
The Josephson effect in silicene-based superconductor/barrier/superconductor (SBS) junction is theoretically investigated by the Dirac-Bogoliubov-de Gennes equation, where superconductors are the proximity effect through superconducting gates and a thick barrier is the presence of a perpendicular electric field and an electrostatic gate. The influence of electric field is used for inducing a bandgap in monolayer silicene. We find that the Josephson current is controlled by the effect of electric field E Z . The behavior of critical current I C on the perpendicular electric fields is linear dependence at case of V G = 0. The gate control of electric field is led to the linear slope d( I C / I 0 )/d lE Z as revealed to 1/ E F and –1/ E F in the different direction of electric fields. In addition, the linear dependence of the Josephson current is considered by the electrostatic gate V G . The appearance of linear effect in the tunable barrier is near the bottom of conduction band and the top of valence band. These results are suitable for controlling the Josephson current in silicene-based junction.