Open AccessThickness and Resistivities of Cu/Ni Film Resulted by Electroplating on the Various Electrolyte Temperature
Author(s) -
Jumratul Wustha,
Moh. Toifur,
Azmi Khusnani
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1373/1/012029
Subject(s) - electrical resistivity and conductivity , electroplating , materials science , electrolyte , cathode , sheet resistance , magnetic field , electrode , analytical chemistry (journal) , layer (electronics) , anode , composite material , metallurgy , electrical engineering , chemistry , engineering , physics , quantum mechanics , chromatography
Synthesis of Cu/Ni thin films has been carried out by electroplating method assisted by magnetic fields at variations in the temperature of the solution. The use of magnetic fields in the deposition process is to accelerate mass transport, reduce the reaction effect of hydrogen evolution, improve surface morphology. An increase in the temperature of the solution can accelerate the rate of Ni ions from the anode to the cathode. The electroplating process is carried out at a DC voltage of 1.5 volts, a magnetic field of 200 gauss that is perpendicular to the electric field, within 5 seconds, and the electrode distance is 4 cm. The solution temperature varied from 40°C – 80°C at intervals of 10 °C. Characterization is done by testing the thickness and resistivity of the Ni layer. Thickness test is done with the help of calculations from the results of weighing Ni. The test of sheet resistivity is done by means of a 4 point probe. The results showed that the greater the temperature of the solution the thicker the Ni layer. The thickness of the Ni layer ranges from (0.09 ± 0.001) μm to (0.38 ± 0.006) μm which is the opposite to the resistivity of the chip, namely the higher the temperature of the solution the smaller the sheet resistivity. The size of the sheet resistivity is from (1.31 ± 0.02) Ω/sq. To (1.38 ± 0.06) Ω/sq to identify relevant articles in literature searches, great care should be taken in constructing both.