Open AccessNumerical simulation of high-speed AIIIBV photodetectors within drift-diffusion approximation
Author(s) -
И. В. Писаренко,
E. A. Ryndin
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1368/4/042052
Subject(s) - photodetector , optoelectronics , laser , diffusion , transient (computer programming) , computer simulation , chip , electronics , computer science , electronic engineering , materials science , optics , physics , electrical engineering , telecommunications , engineering , simulation , thermodynamics , operating system
This paper is focused on a fundamental scientific and technical problem of research and development of high-performance on-chip interconnections for next-generation integrated devices of micro-, nano- and microwave electronics. Previously we proposed an injection laser with functionally integrated optical modulator and double heterostructure, which can be used as an efficient source of light for on-chip optical interconnections. To detect short laser pulses generated by the laser-modulator, a high-speed and technologically compatible photodetector is required. In this paper we develop the non-stationary drift-diffusion model of transient processes in high-speed photodetectors, algorithms of its numerical implementation and applied software intended for one- and two-dimensional simulation of photosensitive optoelectronic devices with various structures. According to the obtained results of drift-diffusion numerical simulation, it is reasonable to research the methods of carrier lifetime reduction in the active regions of photodetectors for on-chip optical interconnections.