Open AccessInP/InGaAs photocathode for hybrid SWIR photodetectors
Author(s) -
K. J. Smirnov,
В. В. Давыдов,
Y. V. Batov
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1368/2/022073
Subject(s) - photocathode , heterojunction , optoelectronics , photodetector , quantum efficiency , realization (probability) , materials science , sensitivity (control systems) , indium gallium arsenide , optics , gallium arsenide , physics , electronic engineering , electron , engineering , statistics , mathematics , quantum mechanics
The technology of creation the photocathode with quantum efficiency at the level of 5% based on the InP/InGaAs heterostructures is given. The effect of decreasing the quantum efficiency of the photosensitive structure on radiant sensitivity is considered. Several variants of realization of vacuum photoelectronic device with InP/InGaAs photocathode for special purposes are represented.