Open AccessMorphology and surface stability of GaN thin film grown on the short growth time by Plasma Assisted Molecular Beam Epitaxy
Author(s) -
Iwan Susanto,
Chin-Ho Tsai,
Tia Rahmiati,
Fachruddin Fachruddin,
IngSong Yu
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1364/1/012067
Subject(s) - molecular beam epitaxy , materials science , reflection high energy electron diffraction , gallium nitride , substrate (aquarium) , sapphire , optoelectronics , thin film , epitaxy , morphology (biology) , nitride , nanotechnology , optics , layer (electronics) , laser , oceanography , physics , geology , biology , genetics
Gallium nitride (GaN) has successfully grown at the short time on the sapphire substrate by plasma-assisted molecular beam epitaxy (PAMBE). The great regular spotty pattern associated with the high crystalline structure has generated perfectly on the GaN thin films monitored by RHEED. The hexagonal structure with the smooth surface condition has been obtained expressly through the surface morphology of GaN films. Moreover, the stability of surface composition was obviously achieved on the GaN thin film evidenced by the high percentage of GaN bonding created on the surface of films. Good quality on the surface morphology followed by the reliable stability of surface composition might even be reached through each the high crystalline and smooth surface of the substrate.