Open AccessUltraviolet photodetectors based on doped ZnO films
Author(s) -
Zi-Neng Ng,
KahYoong Chan
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1349/1/012043
Subject(s) - photosensitivity , photodetector , photoconductivity , photocurrent , materials science , optoelectronics , doping , ultraviolet , indium tin oxide , dark current , biasing , thin film , voltage , nanotechnology , physics , quantum mechanics
In this paper, we report the realization of ultraviolet (UV) photodetector based on doped ZnO films. The ZnO p-n junction was fabricated on indium tin oxide (ITO) coated glass, which consists of n-type and p-type layers based on Ga-doped (2 at.%) and N-doped (20 at.%) ZnO films, respectively. The current-voltage (IV) characteristics, photosensitivity, photoresponsitivity, and photocurrent gain were derived to determine the performance of the device. At 5 V reverse bias, the ZnO-based UV photodetector exhibits photosensitivity of 10.9, photoresponsivity of 2.1 × 10 −2 AW −1 , and photoconductive gain of 7.2 × 10 −2 .