Open AccessThe failure mechanism of NiPtSi multilayer films
Author(s) -
Junmin Zhang,
Minru Wen,
Jialin Chen,
Junming Guo,
Weiming Guan
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1347/1/012033
Subject(s) - materials science , microstructure , wafer , sputter deposition , transmission electron microscopy , leakage (economics) , optoelectronics , sputtering , composite material , thin film , nanotechnology , economics , macroeconomics
In this work, NiPtSi multilayer films were deposited on Si wafer by magnetron sputtering method. The forward voltage (VF) and reverse leakage current (IR) of NiPtSi multilayer films were tested. It was found that VF and IR in some area of the wafer were abnormal as compared with others. Both kinds of multilayer films were examined by transmission electron microscopy (TEM) and energy dispersive X-ray analysis (EDAX). And the reason for abnormal electrical properties were discussed based on the microstructure observation.