Open AccessLaser formation of thin-film memristor structures based on vanadium dioxide
Author(s) -
O. A. Novodvorsky,
Л. С. Паршина,
О. Д. Храмова,
V. Ya. Panchenko
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1347/1/012016
Subject(s) - materials science , pulsed laser deposition , thin film , sapphire , memristor , oxide , layer (electronics) , oxygen , semiconductor , metal , torr , analytical chemistry (journal) , laser , optoelectronics , nanotechnology , optics , electronic engineering , chemistry , metallurgy , physics , engineering , organic chemistry , chromatography , thermodynamics
The thin films of VO 2 and the metal-oxide-metal (MOM)-structures of Au/VO 2 /VO 2- x /Au based on them, which are promising for the use in neuromorphic electronic devices, have been obtained by the method of pulsed laser drop-free deposition on the c-sapphire substrates at room temperature. Using the cyclic I-V characteristics, a memristive effect has been revealed in the vertical geometry of the Au/VO 2 /VO 2-x /Au MOM-structures. The x value was varied in the course of their growth by changing the pressure of buffer oxygen from 0.1 to 40 mTorr in the vacuum chamber, which provided the needed conductivity in the depleted injection layer. The dependence of memristive properties on the thickness of the semiconductor layer and concentration of the oxygen vacancies has been established. The oxygen pressure in the PLD method has been determined, at which the volatile behavior of the memristor resistive switching starts to appear at an oxide region thickness of 10/30 nm.