Open AccessMagnetotransport phenomena and spin accumulation in MIS structures
Author(s) -
Н. В. Волков,
I. A. Bondarev,
A. S. Tarasov,
М. В. Рауцкий,
A. V. Lukyanenko,
D. A. Smolyakov,
С. Н. Варнаков,
С. Г. Овчинников
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1347/1/012006
Subject(s) - magnetoresistance , condensed matter physics , magnetic field , materials science , quantum tunnelling , silicon , semiconductor , lorentz force , spin (aerodynamics) , magnetic semiconductor , optoelectronics , physics , thermodynamics , quantum mechanics
The present work is devoted to magnetic transport in Fe/SiO 2 / p -Si, Mn/SiO 2 / p -Si and Fe 3 Si/ p -Si hybrid structure. For Mn/SiO 2 / p -Si diode extremely large values of magnetoresistance were observed (10 5 % for AC and 10 7 % for DC) which is explained by impact ionization process that can be suppressed by the magnetic field. Lateral photovoltaic effect in Fe/SiO 2 / p -Si have also shown a strong dependence on the magnetic field in low-temperature region (the relative change of photovoltage exceeded 10 3 %). In Fe 3 Si/ p -Si spin accumulation was found via 3-terminal Hanle measurements. We believe that the magnetic field affects electric transport through Lorentz force and through the interface states which are localized at the insulator/semiconductor or metal/semiconductor interfaces. Such states play a decisive role in magnetotrasnport as their energy can be controlled by a magnetic field. In Fe 3 Si/ p -Si they also participate in spin-dependent tunneling, causing spin injection from the Fe 3 Si film into the silicon.