Open AccessResearch on Parallel Operation Characteristics and Current Sharing Method of High Power IGBT
Author(s) -
Yong Tang,
Bo Weng,
Lin Jie
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1346/1/012041
Subject(s) - insulated gate bipolar transistor , correctness , power (physics) , current (fluid) , computer science , power electronics , short circuit , electrical engineering , electronic engineering , single core , engineering , voltage , parallel computing , physics , quantum mechanics , programming language
With the development of power electronics technology, the capacity of power conversion devices is getting larger and larger, and the current level requirements for high-power IGBT are also getting higher and higher. A single device often cannot meet the requirements, and multiple IGBT need to be used in parallel. When IGBT is connected in parallel, due to the differences in device parameters, external circuit parameters and heat dissipation conditions, the current distribution is easily unbalanced, resulting in device performance waste or even damage. Therefore, the current sharing problem is the core problem to be solved in parallel connection of IGBT. In order to solve the problems such as difficulty in analyzing a single factor for coupling of various influencing factors, difficult control of temperature and high cost of circuit, this paper adopts Saber software simulation method to analyze the influence of various internal and external factors on IGBT’s dynamic and static current sharing, thus obtaining the relationship between these factors and corresponding countermeasures, and obtaining an effective IGBT parallel current sharing scheme. Finally, the correctness and effectiveness of this scheme are verified by experiments.