Open AccessLow Stray Inductance Busbar Design and Optimization for SiC-Based Three-Level Device
Author(s) -
Zhenzhou Gong,
Yiting Xie,
Yunfei xu,
Tingting Yuan,
Laili Wang
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1345/3/032062
Subject(s) - busbar , insulated gate bipolar transistor , commutation , inductance , equivalent series inductance , electrical engineering , engineering , electronic engineering , snubber , power (physics) , topology (electrical circuits) , voltage , capacitor , physics , quantum mechanics
In this paper, the sensitivity of switching-off voltage spikes of SiC MOSFET and Si IGBT to stray inductance at the same voltage and current levels is compared and analyzed. The influence of the geometric structure of simple stacked busbar on its stray inductance is analyzed and the general guiding principle of busbar design is given. Aimed at the three-level circuit topology involved in this project, based on the analysis of its working principle and commutation circuit, the stray inductance network of stacked busbar is successfully extracted with the help of finite element simulation software ANSYS Q3D, and the idea of optimizing stray inductance of maximum commutation circuit is putted forward. A set of three-level AC-DC-AC power electronic device is designed, and a series of iterative optimization design and optimization results analysis of the busbar of the device are made.