Open AccessA fabrication of AlGaN / AlN / GaN HEMT without annealing of ohmic contacts
Author(s) -
I. A. Rogachev,
O. Meshkov,
A F Tsatsylnikov,
V V Lyndin,
Е. Е. Заварин,
D A Vakina,
А. С. Курочка,
A N Ganin
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1326/1/012002
Subject(s) - ohmic contact , high electron mobility transistor , materials science , optoelectronics , transistor , fabrication , annealing (glass) , power density , electrical engineering , power (physics) , nanotechnology , metallurgy , voltage , engineering , physics , medicine , alternative medicine , layer (electronics) , pathology , quantum mechanics