Open AccessA 5-15GHz Switchless Broadband Monolithic Integrated Bidirectional Amplifier
Author(s) -
Mengtan Wang,
Zhihong Yao,
Yujie Xu
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1325/1/012220
Subject(s) - amplifier , broadband , electrical engineering , gain compression , direct coupled amplifier , low noise amplifier , reflection coefficient , biasing , transceiver , electronic engineering , operational amplifier , materials science , voltage , engineering , telecommunications , cmos
Based on SiGe HBT technology, two broadband monolithic integrated bidirectional amplifiers (BDA) with different operating voltages (1.8V/3.3V) are designed. By adjusting the bias voltage, the transceiver and receiver of the amplifier are switched. At the same time, a temperature compensation bias circuit is added to reduce the high and low temperature gain variation of the amplifier. It is suitable for multi-function transceiver chip or T/R module. The simulation results show that the gain of 1.8V broadband monolithic integrated bidirectional amplifier can reach 9dB in 5-15GHz operating band, the reflection coefficient of input and output ports is less than - 13dB and - 17dB respectively, the output power of 1dB compression point is + 5.5dBm, the working current is 12.2mA, the gain of 3.3V bidirectional amplifier can reach + 10.5dB, and the reflection coefficient of input and output ports is less than -12dB and -13dB. The output power of 1dB compression point is + 10dBm, and the working current is 20.3mA. The core area of the chip is 0.45 × 0.45mm 2 .