Open AccessDesign of Phased Array T/R Component Microsystem Based on Heterogeneous Integration Technology
Author(s) -
Liu en-da,
Wu Hong-jiang,
Zhao yong-zhi
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1325/1/012010
Subject(s) - transceiver , chip , microsystem , amplifier , noise figure , electrical engineering , microelectromechanical systems , electronic engineering , integrated circuit , die (integrated circuit) , materials science , engineering , computer science , cmos , optoelectronics , nanotechnology
An X-band silicon-based 2×2 phased array T/R module was developed based on MEMS technology and three-dimensional heterogeneous integration technology such as through-silicon via (TSV). The module uses a transceiver integrated multifunction chip solution and is packaged in two layers of silicon: upper layer integrated low noise amplifier, power amplifier, switch, power modulation driver, PMOS and other chips; lower layer integrated multi-function chip, serial-to-parallel chip, logic operation chip. Two-layer silicon package are stacked by solder balls. The T/R module sample’s size is 20mm×20mm×3mm. The test results show that at 8-12GHz, the transmit power is higher than 29dBm, the transmit gain is 20dB, the receive gain is 29dB, the noise figure (NF) is 3dB, and the switch isolation is 37dB.