Open AccessCan Electrostatic Discharge Sensitive electronic devices be damaged by electrostatic fields?
Author(s) -
Jeremy Smallwood
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1322/1/012015
Subject(s) - electrostatic discharge , capacitor , electrical impedance , electrical engineering , voltage , electrostatics , materials science , electrical conductor , optoelectronics , engineering , physics , quantum mechanics
In recent years the susceptibility of ElectroStatic Discharge Sensitive devices (ESDS) to electrostatic fields has been questioned. This paper proposes that very high impedance voltage sensitive ESDS such as MOSFETs or MOS capacitors can be damaged due external field changes without making contact with other conductors in the presence of the field. A simple electronic model is proposed. In a practical evaluation of this risk, discharges are demonstrated to occur due changing external fields, as a result of breakdown of a voltage sensitive structure in a high impedance circuit with one terminal continuously grounded.