Open AccessPreparation and characterization of thin film CoFe2O4/Zn/CoFe2O4 by using spin-coating method
Author(s) -
Hary Sanjaya,
Budhi Oktavia,
Lira Lasdeni Sadri,
Ramli Ramli
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1317/1/012029
Subject(s) - scanning electron microscope , materials science , spin coating , electrical resistivity and conductivity , rotational speed , thin film , analytical chemistry (journal) , layer (electronics) , electrical resistance and conductance , diffraction , composite material , nanotechnology , chemistry , optics , chromatography , physics , engineering , quantum mechanics , electrical engineering
Research has been conducted on the manufacture of CoFe 2 O 4 / Zn/CoFe 2 O 4 thin films using sol gel-spin coating method. This study aims to look at the effect of rotational speed on optical properties and electrical properties, and to find the highest GMR ratio. Making CoFe 2 O 4 uses Co 2+ precursors and Fe 2+ precursors with a mole ratio of 1: 2, dissolved with ethyl alcohol. The Zn precursor was made with a concentration of 0.5 M from Powder (CH 3 COO) 2 Zn. 2H 2 O dissolved with ethyl alcohol. The rotation speed variations used are at 2000 rpm, 2500 rpm, 3000 rpm, 3500 rpm and 4000 rpm. The thin layer of GMR is made with a sandwich structure. CoFe 2 O 4 /Zn/CoFe 2 O 4 thin films with variations in rotational speed were tested for electrical properties using the 4-point probe system method and characterized using X-Ray Diffraction, Scanning Electron Microscopy (SEM), and UV-Vis Specrophotometer. Based on the testing of the electrical properties obtained the lowest resistance and resistivity values at 2000 rpm rotation speed, where the faster the rotational speed is used, the greater the resistance and resistivity values. The highest GMR ratio obtained was 53.5%. Measurement results with Scanning Electron Microscopy (SEM) obtained layer thickness of 3.5 μm.