Open AccessVacuum-semiconductor hybrid photoelectric device for near IR-region
Author(s) -
В. И. Зубков,
Д. Е. Миронов,
А. В. Соломонов
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1313/1/012063
Subject(s) - photoelectric effect , optoelectronics , photocathode , semiconductor , materials science , electric field , photodetector , optics , irradiation , charge carrier , matrix (chemical analysis) , semiconductor device , range (aeronautics) , impurity , wavelength , electron , physics , nanotechnology , layer (electronics) , quantum mechanics , nuclear physics , composite material
Results of the development of a hybrid vacuum semiconductor photodetector for the near IR-range are presented. The device is based on InP/In 0.53 Ga 0.47 As/InP photocathode and electron-sensitive CCD matrix with the number of elements 768×580. In order for the minority charge carriers generated within 0.5 μm from the surface to reach the recording cells, the CCD matrix was thinned to about 30 μm. In addition, in the reverse side of the matrix the phosphorus impurity was implanted. This technique creates the necessary gradient of the electric field, which provides high efficient transport of minority charge carriers to the potential pits of the CCD matrix. At room temperature and continuous irradiation the measured threshold irradiance was registered at the level of 5·10 −8 W/cm 2 for the wavelength range λ = 1–1.5 μm.