Open AccessForms and concentration of adsorbed oxygen on the modified surface of SnO2
Author(s) -
И. А. Пронин,
N. D. Yakushova,
А. А. Карманов,
И. А. Аверин,
В. А. Мошников
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1313/1/012044
Subject(s) - tin dioxide , oxygen , tin oxide , adsorption , semiconductor , doping , ion , oxide , tin , inorganic chemistry , oxygen atom , materials science , chemistry , analytical chemistry (journal) , environmental chemistry , molecule , optoelectronics , metallurgy , organic chemistry
Temperature dependence of oxygen concentration and forms on the undoped and doped semiconductor tin dioxide has been analyzed. It has been found that the main forms of oxygen at operation temperatures of most gas sensors are O – and 02–. When the parent oxide is doped with ions of greater Lewis force, the concentrations of all forms of surface oxygen increase. However, in all cases, defectiveness of semiconductor materials is the main contributor to gas sensitivity.