Open AccessThe influence of solution temperature of SnS thin films grown by successive ionic layer adsorption and reaction (SILAR) method
Author(s) -
Youssef Qachaou,
Othmane Daoudi,
Abderrahim Raidou,
Mohamed Lharch,
A. Qachaou,
M. Fahoume
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1292/1/012022
Subject(s) - scanning electron microscope , raman spectroscopy , orthorhombic crystal system , band gap , materials science , analytical chemistry (journal) , thin film , ionic bonding , energy dispersive x ray spectroscopy , layer (electronics) , adsorption , spectroscopy , direct and indirect band gaps , crystal structure , crystallography , chemistry , nanotechnology , optics , ion , optoelectronics , composite material , quantum mechanics , physics , organic chemistry , chromatography
Tin sulfide is a promising optoelectronic material, which has a particular interest due to its absorption coefficient, direct (indirect) bandgap and its non-toxic components. SnS thin films were deposited on glass substrates by SILAR (Successive Ionic Layer Adsorption and Reaction) method at different solutions temperatureand it is rarely developed by this parameter. The cationic (SnCl2.2H2O) and anionic (Na2S.9H2O) solutions were used as precursors materials. The structure, films composition, morphology, and optical properties were investigated by using X-ray diffraction, Raman spectroscopy, energy dispersive X-ray analysis, Scanning electron microscopy (SEM) and spectrophotometer. X-ray diffraction (XRD) patterns indicated that the deposited SnS thin films have an orthorhombic crystal structure. Raman spectroscopy confirmed the presence of the SnS phase. Uniform deposition of the material over the entire glass substrate was showed by Scanning electron microscopy (SEM). The optical band gap energy was found between 1.6 and 1.85 eV.