Open AccessQubits based on the exciton degrees of freedom of a semiconductor quantum dot
Author(s) -
В. В. Самарцев,
Т. Г. Митрофанова
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1283/1/012012
Subject(s) - exciton , quantum dot , semiconductor , qubit , degrees of freedom (physics and chemistry) , physics , quantum mechanics , biexciton , materials science , optoelectronics , quantum
We have studied theoretically a possibility to construct a quantum gate on the basis of semiconductor quantum dots of a core/shell type.