Open AccessCu (In, Ga) Se2 an absorber layer of photovoltaic devices
Author(s) -
Mohammed A. Hameed,
Akrm N. AL-Shadeedi,
Abeer N. Abdulhameed,
Omar Abdulsada Ali
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1279/1/012062
Subject(s) - copper indium gallium selenide solar cells , chalcopyrite , materials science , layer (electronics) , energy conversion efficiency , photovoltaic system , scanning electron microscope , chemical engineering , nanocrystal , diffraction , optoelectronics , photovoltaics , nanotechnology , copper , metallurgy , optics , composite material , ecology , physics , engineering , biology
CIGS nanoink has synthesized from molecular precursors of CuCl, InCl 3 , GaCl 3 and Se metal heat up 240 °C for a half hour in N 2 -atmosphere to form CIGS nanoink, and then deposited onto substrates of soda-lime glass (SLG). This work focused on CIGS nanocrystals, indicates their synthesis and applications in photovoltaic devices (PVs) as an active light absorber layers. in this work, using spin-coating to deposit CIGS layers (75 mg/ml and 500 nm thickness), without selenization at high temperatures, were obtained up to 1.398 % power conversion efficiency (PCE) at AM 1.5 solar illumination. Structural formations of CIGS chalcopyrite structure were studied by using x ray diffraction XRD. The morphology and composition of CIGS were studied using scanning electron microscopy SEM.