Open AccessThe role of SiHn radicals generation in the mechanisms of formation of thin films of amorphous silicon
Author(s) -
Л. В. Баранова,
В. И. Струнин,
G. Zh Khudaybergenov
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1260/6/062001
Subject(s) - silane , silicon , amorphous silicon , radical , thin film , glow discharge , amorphous solid , deposition (geology) , materials science , decomposition , argon , chemical engineering , plasma , chemistry , crystalline silicon , nanotechnology , organic chemistry , optoelectronics , composite material , physics , quantum mechanics , sediment , engineering , biology , paleontology
In this research, we studied the processes of configuration changes to the structural elements of amorphous silicon thin films created by the decomposition of reacting gas mixture (silane and argon) in low-frequency glow discharge plasma. We analyzed how concentrations of various local atomic groups and their links depend on deposition parameters. We also defined phase composition and the role of SiHn radicals generation in the mechanisms of formation of hydrogenated amorphous silicon thin films deposited on glass and Sitall substrates.