Open AccessResearch and Application of Temperature-sensitive Characteristics of Gate Parameters in GaN high electron mobility transistors
Author(s) -
Chunsheng Guo,
Ling Luo,
Boyang Jiang,
Wenyi Cai,
Shiwei Feng
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1237/3/032078
Subject(s) - high electron mobility transistor , materials science , optoelectronics , transistor , gallium nitride , reliability (semiconductor) , current (fluid) , threshold voltage , power (physics) , voltage , electrical engineering , nanotechnology , physics , engineering , layer (electronics) , quantum mechanics