Open AccessOptimazation of sputtered n-type GaN/InGaN for Cu(In,Ga)Se2 thin film solar cells
Author(s) -
Albert Daniel Saragih,
Hairus Abdullah,
Kuo DongHau
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1230/1/012038
Subject(s) - materials science , sputtering , thin film , solar cell , annealing (glass) , indium , cermet , indium tin oxide , layer (electronics) , optoelectronics , analytical chemistry (journal) , metallurgy , nanotechnology , ceramic , chemistry , chromatography
Cu(In 1- x Ga x )Se 2 thin film solar cell with 3.64% efficiency has been demonstrated by using n -Type GaN/In 0.3 Ga 0.7 N. The CIGSe thin film was prepared by co-sputtering with two targets of Cu-In and Ga 2 Se 3 +Sb 2 S 3 . CIGSe films on the Mo/glass substrates were made by co-sputtering technique at 100 °C with a metal target of Cu-In operated at 15 W and a cermet target of Ga 2 Se 3 +Sb 2 S 3 at 55 W, followed by thermal annealing at 600 °C for 1 h. The properties of the CIGSe thin film was studied by measuring the electrical, structural and crystal structure. Solar cell devices were designed by depositing ∼50 nm GaN layer and ∼300 nm In 0.15 Ga 0.85 N or In 0.3 Ga 0.7 N followed by coating front contact with 300–400 nm indium-tin-oxide (ITO).