Open AccessGrowth and fabrication of 850 nm AlGaAs/GaAs vertical cavity surface emitting laser structure
Author(s) -
Neil Irvin Cabello,
Philippe Martin Tingzon,
Horace Andrew Husay,
John Daniel Vasquez,
Rommel Jagus,
Kerphy Liandro Patrocenio,
Karl Cedric Gonzales,
Gerald Angelo Catindig,
Elizabeth Ann Prieto,
Armando Somintac,
A. Salvador,
Elmer Estacio
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1217/1/012003
Subject(s) - vertical cavity surface emitting laser , distributed bragg reflector , optoelectronics , materials science , laser , distributed bragg reflector laser , fabrication , quantum well , electroluminescence , optics , reflector (photography) , wavelength , semiconductor laser theory , semiconductor , layer (electronics) , light source , nanotechnology , physics , medicine , alternative medicine , pathology
In this work, we demonstrate the NIP’s all in-house development of a vertical cavity surface emitting laser structure. The VCSEL structure grown via MBE consists of an AlAs/AlGaAs distributed Bragg reflector and an AlGaAs/GaAs quantum well designed to issue at the 850 nm region. Reflectance spectroscopy showed that the stop band is centered around the designed wavelength. The electroluminescence spectra displayed that the maximum light emission corresponded to its design. This is a crucial step in the NIP’s development of semiconductor lasers, leading towards future high-speed and highly-tunable VCSEL devices.