Open AccessECV profiling of GaN HEMT heterostructures
Author(s) -
G. E. Yakovlev,
В. И. Зубков
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1199/1/012032
Subject(s) - high electron mobility transistor , materials science , heterojunction , optoelectronics , piezoelectricity , transistor , charge carrier density , capacitance , wide bandgap semiconductor , fermi gas , polarization (electrochemistry) , charge density , voltage , electron , chemistry , electrode , electrical engineering , doping , physics , composite material , quantum mechanics , engineering