Open AccessThe contribution of the In distribution in InGaN/GaN MQW to the “green gap” phenomenon
Author(s) -
N. A. Talnishnikh,
А. Е. Иванов,
A. G. Smirnova,
Е. И. Шабунина,
N. M. Shmidt
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1199/1/012015
Subject(s) - materials science , optoelectronics , light emitting diode , wide bandgap semiconductor , wavelength , redistribution (election) , politics , political science , law