Open AccessPropagation of stacking faults from “composite” dislocation cores at low temperature in silicon nanostructures
Author(s) -
Julien Godet,
J. Rabier
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1190/1/012007
Subject(s) - stacking , partial dislocations , materials science , silicon , dislocation , nanostructure , shear stress , shear (geology) , condensed matter physics , composite number , stress (linguistics) , stacking fault , core (optical fiber) , composite material , crystallography , nanotechnology , optoelectronics , nuclear magnetic resonance , physics , chemistry , linguistics , philosophy
The unexpected occurrence of extended stacking faults in silicon nanostructures at high stress and low temperature is discussed. It is shown that those stacking faults result from the operation of “composite” dislocation core structures. It is demonstrated that such cores allow for the propagation of partial dislocations in the shuffle set with the benefit of a low Peierls stress. A classical atomistic calculation confirms indeed that shuffle partial dislocations can move under a shear stress of about 3.3 GPa (5.5% shear strain) at room temperature.