Open AccessCombined DLTS/MCTS investigations of deep electrical levels of regular dislocation networks in silicon
Author(s) -
Maxim V. Trushin,
Anton Varlamov,
A. S. Loshachenko,
O. F. Vyvenko,
M. Kittler
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1190/1/012005
Subject(s) - deep level transient spectroscopy , dislocation , silicon , materials science , dissociation (chemistry) , conduction band , wafer , crystallography , condensed matter physics , molecular physics , atomic physics , chemistry , electron , optoelectronics , physics , quantum mechanics
Local electronic states of regular dislocation networks produced by n- and p-type silicon wafer bonding with different screw dislocation density were studied with deep-level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS). A drastic sadden changes of the electric level spectrum with increasing of dislocation density from two shallow bands located near the edges of valence and conduction bands towards two deep bands with energy positions about E c - (0.22-0.26) eV and E v + (0.4-0.53) eV were found. The origin of the electric level spectrum changes is ascribed to the changes of dislocation core structure from dissociated to perfect ones that occur when interdislocation distances became comparable with the dislocation equilibrium dissociation width. The obtained results correlate well with the results of recent studies of recombination activity of grain boundaries in mc-Si.