Open Access19th International Conference on Extended Defects in Semiconductors (EDS2018)
Publication year - 2019
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1190/1/011001
Subject(s) - scope (computer science) , limiting , electronic materials , engineering physics , dimension (graph theory) , subject (documents) , engineering ethics , nanotechnology , computer science , library science , materials science , engineering , mechanical engineering , mathematics , pure mathematics , programming language
FOREWORD This Proceedings is a collection of peer-reviewed papers presented at EDS2018 , a biannual International Conference on “ E xtended D efects in S emiconductors” , which was held June 24-29, 2018 in Thessaloniki, Greece. Nineteenth in the series of EDS conferences, the scope of EDS2018 was twofold: to assess the current state of knowledge on the properties of heterophase interfaces in the presence of defects and to consider the impact of this knowledge on low-dimension nanostructures and on the design of devices influencing their electronic, opto-electronic, magnetic, and mechanical properties. The conference covered new results with emphasis placed on research addressing the role of extended defects on limiting device performance, new developments in methodologies and tools for defect engineering in semiconducting materials, and advanced characterization techniques. Invited lectures dealing with materials science fundamentals and methodology added educational content especially directed to doctoral and post-doctoral students. It is hoped that this Proceedings provide the reader with a timely standpoint on the fast-evolving subject of Extended Defects in Semiconductors. List of Organisation and Conference Photo are available in this PDF.