Open AccessA surface-potential-based drain current model suitable for poly-Si thin film transistors with thin body and thin gate oxide
Author(s) -
Zhen Zhu,
Junhao Chu
Publication year - 2018
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1141/1/012066
Subject(s) - materials science , optoelectronics , thin film transistor , polycrystalline silicon , thin film , transistor , gate oxide , charge density , oxide , current density , silicon , current (fluid) , electrical engineering , nanotechnology , voltage , layer (electronics) , physics , engineering , metallurgy , quantum mechanics