Open AccessMBE growth and properties of GaAs, AlGaAs and InAs nanowires on SiC/Si(111) hybrid substrate
Author(s) -
R. R. Reznik,
I. V. Shtrom,
I. P. Soshnikov,
С. А. Кукушкин,
D. A. Kirilenko,
G. É. Cirlin
Publication year - 2018
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1135/1/012036
Subject(s) - nanowire , materials science , substrate (aquarium) , molecular beam epitaxy , optoelectronics , silicon , silicon carbide , photoluminescence , nanometre , nanotechnology , silicon nanowires , layer (electronics) , epitaxy , composite material , oceanography , geology