
MOS structures containing silicon nanoparticles for memory device applications
Author(s) -
N. Nedev,
D. Nesheva,
E. Manolov,
R. Brüggemann,
Sebastian Meier,
Z. Levi,
Roumen Zlatev
Publication year - 2008
Publication title -
journal of physics. conference series
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/113/1/012034
Subject(s) - materials science , silicon , nanocrystalline silicon , wafer , annealing (glass) , crystalline silicon , nanoparticle , strained silicon , amorphous solid , silicon oxide , amorphous silicon , oxide , nanotechnology , optoelectronics , chemical engineering , composite material , crystallography , metallurgy , silicon nitride , chemistry , engineering