Open AccessRoom temperature lasing in injection microdisks with InGaAsN/GaAs quantum well active region
Author(s) -
E. I. Moiseev,
M. V. Maximov,
A. M. Nadtochiy,
N. V. Kryzhanovskaya,
D. A. Sannikov,
Timur Yagafarov,
M. M. Kulagina,
Tapio Niemi,
Riku Isoaho,
Mircea Guina,
A. E. Zhukov
Publication year - 2018
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1124/8/081048
Subject(s) - lasing threshold , optoelectronics , materials science , quantum well , gallium arsenide , optics , laser , physics , wavelength