Open AccessScanning probe microscopy of AlGaAs/GaAs diode after partial electrical breakdown
Author(s) -
A O Mikhaylov,
P. A. Alekseev,
A. A. Podoskin,
S. O. Slipchenko,
M. S. Dunaevskiy
Publication year - 2018
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1124/8/081013
Subject(s) - materials science , heterojunction , diode , optoelectronics , breakdown voltage , semiconductor , semiconductor device , oxide , voltage , microscopy , nanotechnology , optics , electrical engineering , physics , layer (electronics) , metallurgy , engineering