Open AccessInvestigation of the influence of parameters of nanoscale profiling of the surface of GaAs structures by a combination of local anodic oxidation and plasma chemical etching methods
Author(s) -
В. С. Климин,
A A Rezvan,
И. Н. Коц,
N A Naidenko
Publication year - 2018
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1124/7/071019
Subject(s) - etching (microfabrication) , plasma etching , isotropic etching , nanoscopic scale , gallium arsenide , nanostructure , oxide , plasma , surface roughness , materials science , reactive ion etching , anode , chlorine , analytical chemistry (journal) , chemistry , chemical engineering , nanotechnology , optoelectronics , electrode , composite material , metallurgy , layer (electronics) , chromatography , physics , quantum mechanics , engineering