Open AccessIncrease of accuracy of capacitance parameters measurements of power semiconductor modules on base IGBT and FRD
Author(s) -
D A Knyaginin,
Alexandr Drakin,
S. B. Rybalka,
A.M. Demidov
Publication year - 2018
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1124/7/071017
Subject(s) - insulated gate bipolar transistor , capacitance , bipolar junction transistor , software , power semiconductor device , power (physics) , diode , electronic engineering , power module , transistor , process (computing) , electrical engineering , computer science , semiconductor , semiconductor device , engineering , materials science , voltage , physics , electrode , quantum mechanics , layer (electronics) , composite material , programming language , operating system