Open AccessSimulation of electrical conductivity of silicon diodes with bismuth implanted-ion profiles
Author(s) -
S M Loganchuk,
С. Н. Чеботарев,
D. A. Arustamyan,
A A A Mohamed,
L Touel,
Н. М. Богатов
Publication year - 2018
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1124/7/071009
Subject(s) - bismuth , silicon , materials science , diode , ion , optoelectronics , conductivity , electrical resistivity and conductivity , ion implantation , electrical engineering , chemistry , metallurgy , engineering , organic chemistry