Open AccessOn the mechanism of spin-polarized injection in (Ga,Mn)As/n+GaAs/InGaAs Zener tunnel diode
Author(s) -
M. V. Ved,
М. В. Дорохин,
Е. И. Малышева,
A. V. Zdoroveyshchev,
Yu. A. Danilov,
А. Е. Парафин,
Yu. M. Kuznetsov
Publication year - 2018
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1124/6/061005
Subject(s) - quantum tunnelling , condensed matter physics , curie temperature , zener diode , spin polarization , circular polarization , electron , materials science , spin (aerodynamics) , semiconductor , magnetic semiconductor , quantum well , diode , depolarization , polarization (electrochemistry) , magnetic field , ferromagnetism , chemistry , optoelectronics , physics , optics , voltage , transistor , quantum mechanics , thermodynamics , medicine , laser , endocrinology