Open AccessThe study of photoluminescence properties of AlGaAs/GaAs heterostructure after Ga+ focused ion beam etching
Author(s) -
G. V. Voznyuk,
I. V. Levitskii,
М. И. Митрофанов,
М. Н. Мизеров,
D. N. Nikolaev,
V. P. Evtikhiev
Publication year - 2018
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1124/5/051016
Subject(s) - materials science , heterojunction , optoelectronics , fabrication , focused ion beam , luminescence , photoluminescence , etching (microfabrication) , annealing (glass) , reactive ion etching , electron beam lithography , ion beam , nanotechnology , ion , resist , chemistry , composite material , organic chemistry , layer (electronics) , medicine , alternative medicine , pathology