Open AccessFormation of nanoscale structures on the surface of gallium arsenide by local anodic oxidation and plasma chemical etching
Author(s) -
В. С. Климин,
М. С. Солодовник,
С. А. Лисицын,
A A Rezvan,
С. В. Балакирев
Publication year - 2018
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1124/4/041024
Subject(s) - nanoscopic scale , etching (microfabrication) , materials science , inductively coupled plasma , plasma , plasma etching , oxide , lithography , isotropic etching , gallium arsenide , layer (electronics) , optoelectronics , nanotechnology , metallurgy , physics , quantum mechanics