
MBE growth of GaAs nanowires with modulated crystal structure
Author(s) -
I. V. Ilkiv,
K. P. Kotlyar,
D. A. Kirilenko,
С. П. Лебедев,
А. А. Лебедев,
P. A. Alekseev,
A. D. Bouravleuv,
G. É. Cirlin
Publication year - 2018
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1124/2/022043
Subject(s) - nanowire , superstructure , molecular beam epitaxy , quasiperiodic function , transmission electron microscopy , materials science , characterization (materials science) , optoelectronics , nanotechnology , epitaxy , condensed matter physics , physics , layer (electronics) , thermodynamics