Open AccessTransformation of the defect structure of InGaAs and InAlAs metamorphic buffer layers depending on indium concentration
Author(s) -
Leonid Snigirev,
A. А. Ситникова,
D. A. Kirilenko,
Н. А. Берт
Publication year - 2018
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1124/2/022027
Subject(s) - dislocation , materials science , transmission electron microscopy , buffer (optical fiber) , molecular beam epitaxy , layer (electronics) , epitaxy , substrate (aquarium) , metamorphic rock , indium , x ray absorption spectroscopy , relaxation (psychology) , optoelectronics , crystallography , condensed matter physics , optics , chemistry , nanotechnology , composite material , absorption spectroscopy , geology , telecommunications , geochemistry , computer science , psychology , social psychology , oceanography , physics